- 您現在的位置：買賣IC網 > PDF目錄48366 > AP2306AGN-HF (ADVANCED POWER ELECTRONICS CORP) 5 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | AP2306AGN-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 3/5頁 |
| 文件大小： | 106K |
| 代理商： | AP2306AGN-HF |
AP2306AGN-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
20
40
60
80
01
23
45
67
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
V G =2.5V
4.0V
5.0V
4.5V
0
10
20
30
40
50
0123
45678
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
4.0V
V G =2.5V
4.5V
5.0V
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
T j , Junction Temperature (
o C )
V
GS(t
h)
(V
)
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
V G =4.5V
I D =5A
20
30
40
50
60
024
68
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =2.6A
T A =25
o C
相關PDF資料 |
PDF描述 |
|---|---|
| AP2314GN-HF | 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AP2334GN-HF | 5.6 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP2612GY-HF | 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP26G40GEO-HF | 400 V, N-CHANNEL IGBT |
| AP2761I-H | 6 A, 700 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AP2306AGN-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 35MOHM SOT-23 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 35MOHM, SOT-23 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 35MOHM, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.035ohm, Rds(on) Test Voltage Vgs:4.5V, Power Dissipation Pd:1.38W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 35MOHM, SOT-23, Transistor Polarity:N Channel, Continuous Drai |
| AP2306CGN-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V gate drive, Lower on-resistance |
| AP2306CGTN-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Lower On-resistance |
| AP2306GN | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2306GN-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V gate drive, Lower on-resistance |
發布緊急采購，3分鐘左右您將得到回復。