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參數(shù)資料
| 型號(hào)： | AP2314GN-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 95K |
| 代理商： | AP2314GN-HF |
AP2314GN-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
5
10
15
01
23
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
V G =1. 5V
5.0V
4.5V
3.0V
2.5V
0
5
10
15
01
23
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A = 150
o C
5.0V
4.5V
3.0 V
2.5V
V G = 1 .5V
40
60
80
100
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =1.2A
T A =25
o C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D = 3.5 A
V G =4.5V
0.0
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
0
1
2
3
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
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| AP2314GN-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 20V 75MOHM SOT-23 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 20V, 75MOHM, SOT-23 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 20V, 75MOHM, SOT-23, Transistor Polarity:N Channel, Continuous Drai |
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