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參數資料
| 型號： | AP4435GM-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件頁數： | 4/5頁 |
| 文件大小： | 202K |
| 代理商： | AP4435GM-HF |
AP4435GM-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4
0.01
0.10
1.00
10.00
100.00
0.01
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
2
4
6
8
10
12
0
10203040
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D = -7A
V DS = -24V
100
1000
10000
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
10
20
30
40
012
3456
-V GS , Gate-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS = -5V
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| AP4503BGM-HF | 8.2 A, 30 V, 0.018 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| AP4506GEM | 30 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AP4435GYT-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile |
| AP4435M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4436GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
| AP4437GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower On-resistance |
| AP4438AGM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
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