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參數資料
| 型號： | AP6677GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 40 V, 0.0123 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 4/5頁 |
| 文件大小： | 148K |
| 代理商： | AP6677GH |
AP6677GH
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
12
0
1020304050607080
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =-32V
I D =-30A
0
1000
2000
3000
4000
1
5
9
131721
2529
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
1
10
100
1000
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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| AP6679GH | 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
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| AP6679GJ-HF | 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP6679GH-HF | 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP6680GM | 11.5 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AP6679BGH-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement |
| AP6679BGI-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement |
| AP6679BGM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower On-resistance |
| AP6679BGP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement |
| AP6679GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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