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參數資料
| 型號： | AP6900GSM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁數： | 3/9頁 |
| 文件大?。?/td> | 134K |
| 代理商： | AP6900GSM |
AP6900GSM
CH-2 Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃,ID=1mA
-
0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=9A
-
22
mΩ
VGS=4.5V, ID=7A
-
29
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=9A
-
11
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
100
uA
Drain-Source Leakage Current ( Tj=70
oC)
VDS=24V, VGS=0V
-
1
mA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=7A
-
25
40
nC
Qgs
Gate-Source Charge
VDS=24V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
7
-
nC
td(on)
Turn-on Delay Time
2
VDS=20V
-
10
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=5.7Ω,VGS=10V
-
26
-
ns
tf
Fall Time
RD=20Ω
-12
-
ns
Ciss
Input Capacitance
VGS=0V
-
1170 1860
pF
Coss
Output Capacitance
VDS=25V
-
205
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
142
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.7
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=2.6A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
Is=7A,
VGS=0V,
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10 sec.
3/9
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