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參數(shù)資料
| 型號(hào)： | AUIRFP2907 |
| 元件分類： | JFETs |
| 英文描述： | 90 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 220K |
| 代理商： | AUIRFP2907 |
AUIRFP2907
HEXFET Power MOSFET
06/23/11
www.irf.com
1
PD -97692
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Features
l
Advanced Planar Technology
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Low On-Resistance
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Dynamic dV/dT Rating
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
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Repetitive Avalanche Allow
ed
up to Tjmax
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Lead-Free, RoHS Compliant
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Automotive Qualified*
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
GD
S
Gate
Drain
Source
V(BR)DSS
75V
RDS(on) typ.
3.6m
Ω
max
4.5m
Ω
ID (Silicon Limited)
209Ah
ID (Package Limited)
90A
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
c
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.32
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
–––
40
5.0
1970
See Fig. 12a, 12b, 15, 16
470
3.1
± 20
Max.
209
h
148
h
840
90
-55 to + 175
300
10 lbf
yin (1.1Nym)
AUTOMOTIVE GRADE
TO-247AC
AUIRFP2907
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRFP2907 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 75V 90A TO-24 |
| AUIRFP2907Z | 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFP4004 | 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 1.7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRFP4004 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 40V 195ATO-24 |
| AUIRFP4110 | 制造商:International Rectifier 功能描述: |
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