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參數(shù)資料
| 型號： | AUIRFU024N |
| 元件分類： | JFETs |
| 英文描述： | 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, IPAK-3 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 379K |
| 代理商： | AUIRFU024N |
AUIRFR024N
AUIRFU024N
www.irf.com
1
02/22/11
HEXFET Power MOSFET
AUTOMOTIVE GRADE
l
Advanced Planar Technology
l
Low On-Resistance
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
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Repetitive Avalanche Allowed up to Tjmax
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Lead-Free, RoHS Compliant
l
Automotive Qualified *
Specifically designed for Automotive applications, this
Cellular design of HEXFET Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
Description
Features
D-Pak
AUIRFR024N
GD
S
Gate
Drain
Source
I-Pak
AUIRFU024N
S
D
G
D
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
55V
RDS(on) max.
0.075
ID
17A
g
S
D
G
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
h
PD @TC = 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy
dh
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
eh
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
3.3
RθJA
Junction-to-Ambient (PCB mount) **
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
-55 to + 175
300 (1.6mm from case )
45
0.3
± 20
5.0
4.5
71
10
Max.
17
12
68
PD - 96355
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AUIRFR024NTR | 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR024N | 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR024NTRR | 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFR024NTRL | 17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRFU4615 | 33 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
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