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參數資料
| 型號： | DEMO-ATF-5X1P8 |
| 英文描述： | Demonstration circuit board for ATF-511P8. ATF-521P8 and ATF-531P8 |
| 中文描述： | 論證亞歐信托基金電路板- 511P8。亞歐信托基金- 521P8和ATF - 531P8 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 70K |
| 代理商： | DEMO-ATF-5X1P8 |
Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
Features
High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
900 MHz Performance:
1.1 dB NF, 14.5 dB G
A
Characterized for End-of-
Life Battery Use ( 2.7 V)
SOT-363 ( SC-70) Plastic
Package
Tape-and-Reel Packaging
Option Available
[1]
AT-32063
Description
The AT-32063 contains two high
performance NPN bipolar transis-
tors in a single SOT-363 package.
The devices are unconnected,
allowing flexibility in design. The
pin-out is convenient for cascode
amplifier designs. The SOT-363
package is an industry standard
plastic surface mount package.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of the transistor yields extremely
high performance products that
can perform a multiplicity of
tasks. The 20 emitter finger
interdigitated geometry yields a
transistor that is easy to match to
and extremely fast, with moderate
power, low noise resistance, and
low operating currents.
Optimized performance at 2.7 V
makes this device ideal for use in
900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
B
1
1
E
1
2
C
2
3
C
1
6
E
2
5
B
2
4
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 5 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes this device a
good fit for 900 MHz pager appli-
cations. Voltage breakdowns are
high enough for use at 5 volts.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Agilent’s 10 GHz f
t
, 30
GHz f
max
Self-Aligned-Transistor
(SAT) process. The die are nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metallization
in the fabrication of these devices.
II
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