分離式半導體產品 SI1305EDL-T1-GE3品牌、價格、PDF參數
SI1305EDL-T1-GE3 • 品牌、價格
| 元器件型號 |
廠商 |
描述 |
數量 |
價格 |
| SI1305EDL-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 8V 860MA SOT323-3 |
0 |
|
| SI1450DH-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 8V 6.04A SC70-6 |
0 |
|
| SI2341DS-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 30V SOT-23 |
0 |
|
| SI3456BDV-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 4.5A 6-TSOP |
0 |
|
| SI3456CDV-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 7.7A 6TSOP |
0 |
|
| SI3879DV-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH/SCHOTTKY 20V 6-TSOP |
0 |
|
| SI4322DY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 18A 8-SOIC |
0 |
|
| SI4362BDY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V 8-SOIC |
0 |
|
| SI4453DY-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH D-S 12V 8-SOIC |
0 |
|
| SI4840DY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 40V 8-SOIC |
0 |
|
| SI5449DC-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 30V 3.1A 1206-8 |
0 |
|
| SI5463EDC-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 20V 3.8A 1206-8 |
0 |
|
| SI5475DC-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH 12V 5.5A 1206-8 |
0 |
|
| SI5480DU-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 12A PPAK CHIPFET |
0 |
|
| SI5482DU-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 12A PPAK CHIPFET |
0 |
|
| SI5858DU-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 20V 6A PPAK CHIPFET |
0 |
|
| SI7358ADP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V PPAK 8SOIC |
0 |
|
| SI7368DP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 20V PPAK 8SOIC |
0 |
|
| SI7407DN-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH D-S 12V PPAK 1212-8 |
0 |
|
| SI7445DP-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH D-S 20V PPAK 1212-8 |
0 |
|
SI1305EDL-T1-GE3 • PDF參數
| 類別: |
分離式半導體產品
|
| FET 型: |
MOSFET P 通道，金屬氧化物
|
| FET 特點: |
邏輯電平門
|
| 漏極至源極電壓(Vdss): |
8V
|
| 電流 - 連續漏極(Id) @ 25° C: |
860mA
|
| 開態Rds（最大）@ Id, Vgs @ 25° C: |
280 毫歐 @ 1A，4.5V
|
| Id 時的 Vgs(th)（最大）: |
450mV @ 250µA
|
| 閘電荷(Qg) @ Vgs: |
4nC @ 4.5V
|
| 輸入電容 (Ciss) @ Vds: |
-
|
| 功率 - 最大: |
290mW
|
| 安裝類型: |
表面貼裝
|
| 封裝/外殼: |
SC-70，SOT-323
|
| 供應商設備封裝: |
SC-70-3
|
| 包裝: |
帶卷 (TR)
|