| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| IPB530N15N3 G | Infineon Technologies | MOSFET N-CH 150V 21A TO263-3 | 2,000 | 1,000:$0.79489 2,000:$0.74007 5,000:$0.71266 10,000:$0.68525 25,000:$0.67155 50,000:$0.65784 |
| IPI024N06N3 G | Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | 0 | 500:$2.38508 |
| IPD048N06L3 G | Infineon Technologies | MOSFET N-CH 60V 90A TO252-3 | 0 | 2,500:$0.70322 |
| IPD50R500CE | Infineon Technologies | MOSF 500V 7.6A PG-TO252 | 0 | 2,500:$0.70281 5,000:$0.67678 12,500:$0.65075 25,000:$0.63774 62,500:$0.62472 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 150V |
| 電流 - 連續漏極(Id) @ 25° C: | 21A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 53 毫歐 @ 18A，10V |
| Id 時的 Vgs(th)（最大）: | 4V @ 35µA |
| 閘電荷(Qg) @ Vgs: | 12nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 887pF @ 75V |
| 功率 - 最大: | 68W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應商設備封裝: | PG-TO263-2 |
| 包裝: | 帶卷 (TR) |