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分離式半導體產品 BSC032NE2LS品牌、價格、PDF參數

BSC032NE2LS • 品牌、價格
元器件型號 廠商 描述 數量 價格
BSC032NE2LS Infineon Technologies MOSFET N-CH 25V 22A TDSON-8 9,992 1:$1.53000
10:$1.37100
25:$1.20960
100:$1.08860
250:$0.94752
500:$0.84672
1,000:$0.66528
2,500:$0.62496
IPD088N06N3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3 4,750 1:$1.44000
10:$1.28500
25:$1.13360
100:$1.02030
250:$0.88808
500:$0.79360
1,000:$0.62354
IPD088N06N3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3 4,750 1:$1.44000
10:$1.28500
25:$1.13360
100:$1.02030
250:$0.88808
500:$0.79360
1,000:$0.62354
IPD079N06L3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3 4,300 1:$1.44000
10:$1.28500
25:$1.13360
100:$1.02030
250:$0.88808
500:$0.79360
1,000:$0.62354
IPD079N06L3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3 4,300 1:$1.44000
10:$1.28500
25:$1.13360
100:$1.02030
250:$0.88808
500:$0.79360
1,000:$0.62354
BSO080P03NS3E G Infineon Technologies MOSFET P-CH 30V 12A 8DSO 4,970 1:$1.14000
10:$1.02300
25:$0.90320
100:$0.81270
250:$0.70736
500:$0.63210
1,000:$0.49665
BSO080P03NS3E G Infineon Technologies MOSFET P-CH 30V 12A 8DSO 4,970 1:$1.14000
10:$1.02300
25:$0.90320
100:$0.81270
250:$0.70736
500:$0.63210
1,000:$0.49665
BSO080P03NS3E G Infineon Technologies MOSFET P-CH 30V 12A 8DSO 0 2,500:$0.42140
5,000:$0.40033
12,500:$0.38378
25,000:$0.37324
62,500:$0.36120
BSC032NE2LS • PDF參數
類別: 分離式半導體產品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 25V
電流 - 連續漏極(Id) @ 25° C: 84A
開態Rds（最大）@ Id, Vgs @ 25° C: 3.2 毫歐 @ 30A，10V
Id 時的 Vgs(th)（最大）: 2V @ 250µA
閘電荷(Qg) @ Vgs: 16nC @ 10V
輸入電容 (Ciss) @ Vds: 1200pF @ 12V
功率 - 最大: 37W
安裝類型: 表面貼裝
封裝/外殼: 8-PowerTDFN
供應商設備封裝: PG-TDSON-8
包裝: Digi-Reel®