半導(dǎo)體模塊 APTM50DDA10T3G品牌、價(jià)格、PDF參數(shù)
APTM50DDA10T3G • 品牌、價(jià)格
| 元器件型號(hào) |
廠商 |
描述 |
數(shù)量 |
價(jià)格 |
| APTM50DDA10T3G |
Microsemi Power Products Group |
MOSFET MOD DUAL BOOST CHOP SP3 |
0 |
14:$60.13571
|
| APTM100H80FT1G |
Microsemi Power Products Group |
MOSFET MODULE FULL BRIDGE SP1 |
0 |
15:$58.07533
|
| APTM10DSKM19T3G |
Microsemi Power Products Group |
MOSFET MOD DUAL BUCK CHOPPER SP3 |
0 |
17:$50.16529
|
| APTC60SKM35T1G |
Microsemi Power Products Group |
MOSFET N-CH 600V 72A SP1 |
0 |
19:$48.94947
|
| APTM100SK40T1G |
Microsemi Power Products Group |
MOSFET N-CH 1000V 20A SP1 |
0 |
22:$41.94909
|
| APTC80SK15T1G |
Microsemi Power Products Group |
MOSFET N-CH 800V 28A SP1 |
0 |
24:$37.38292
|
| APTC80DA15T1G |
Microsemi Power Products Group |
MOSFET N-CH 800V 28A SP1 |
0 |
24:$37.38292
|
APTM50DDA10T3G • PDF參數(shù)
| 類別: |
半導(dǎo)體模塊
|
| FET 型: |
2 個(gè) N 溝道（雙）
|
| FET 特點(diǎn): |
標(biāo)準(zhǔn)
|
| 漏極至源極電壓(Vdss): |
500V
|
| 電流 - 連續(xù)漏極(Id) @ 25° C: |
37A
|
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: |
120 毫歐 @ 18.5A，10V
|
| Id 時(shí)的 Vgs(th)（最大）: |
5V @ 1mA
|
| 閘電荷(Qg) @ Vgs: |
96nC @ 10V
|
| 輸入電容 (Ciss) @ Vds: |
4367pF @ 25V
|
| 功率 - 最大: |
312W
|
| 安裝類型: |
底座安裝
|
| 封裝/外殼: |
SP3
|
| 供應(yīng)商設(shè)備封裝: |
SP3
|
| 包裝: |
散裝
|