分離式半導(dǎo)體產(chǎn)品 NVMD6N03R2G品牌、價(jià)格、PDF參數(shù)
NVMD6N03R2G • 品牌、價(jià)格
| 元器件型號 |
廠商 |
描述 |
數(shù)量 |
價(jià)格 |
| NVMD6N03R2G |
ON Semiconductor |
MOSFET N-CH 30V 6A 8SOIC |
0 |
2,500:$0.35000
|
| MCH6660-TL-H |
ON Semiconductor |
MOSFET N/P-CH 10V 2/1.5A MCPH6 |
0 |
3,000:$0.35196
|
| MCH6662-TL-H |
ON Semiconductor |
MOSFET N-CH 20V 2A DUAL MCPH6 |
0 |
3,000:$0.35196
|
| MCH6663-TL-H |
ON Semiconductor |
MOSFET N/P-CH 30V 1.8/1.5A MCPH6 |
0 |
3,000:$0.35196
|
| NVMFD5877NLT1G |
ON Semiconductor |
MOSFET N-CH 60V 17A 8SOIC |
0 |
1,500:$0.36016
|
NVMD6N03R2G • PDF參數(shù)
| 類別: |
分離式半導(dǎo)體產(chǎn)品
|
| FET 型: |
2 個(gè) N 溝道（雙）
|
| FET 特點(diǎn): |
邏輯電平門
|
| 漏極至源極電壓(Vdss): |
30V
|
| 電流 - 連續(xù)漏極(Id) @ 25° C: |
6A
|
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: |
32 毫歐 @ 6A，10V
|
| Id 時(shí)的 Vgs(th)（最大）: |
2.5V @ 250µA
|
| 閘電荷(Qg) @ Vgs: |
30nC @ 10V
|
| 輸入電容 (Ciss) @ Vds: |
950pF @ 24V
|
| 功率 - 最大: |
1.29W
|
| 安裝類型: |
表面貼裝
|
| 封裝/外殼: |
8-SOIC（0.154"，3.90mm 寬）
|
| 供應(yīng)商設(shè)備封裝: |
8-SOIC
|
| 包裝: |
帶卷 (TR)
|