分離式半導(dǎo)體產(chǎn)品 SQJ964EP-T1-GE3品牌、價(jià)格、PDF參數(shù)
SQJ964EP-T1-GE3 • 品牌、價(jià)格
| 元器件型號(hào) |
廠商 |
描述 |
數(shù)量 |
價(jià)格 |
| SQJ964EP-T1-GE3 |
Vishay Siliconix |
MOSFET DUAL N-CH 60V PPAK 8SOIC |
0 |
3,000:$1.28250
|
| SI7964DP-T1-GE3 |
Vishay Siliconix |
MOSFET DUAL N-CH 60V PPAK 8SOIC |
0 |
3,000:$1.16100
|
| SI4933DY-T1-GE3 |
Vishay Siliconix |
MOSFET P-CH DUAL 12V 8-SOIC |
0 |
2,500:$1.10700
|
| SI4818DY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH DUAL 30V 8-SOIC |
0 |
2,500:$1.10700
|
| SI4816DY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH DUAL 30V 8-SOIC |
0 |
2,500:$1.10700
|
| SI4562DY-T1-GE3 |
Vishay Siliconix |
MOSFET N/P-CH 20V 8-SOIC |
0 |
2,500:$1.09755
|
| SQJ844EP-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH D-S 30V PPAK 8SOIC |
0 |
3,000:$1.08000
|
SQJ964EP-T1-GE3 • PDF參數(shù)
| 類別: |
分離式半導(dǎo)體產(chǎn)品
|
| FET 型: |
2 個(gè) N 溝道（雙）
|
| FET 特點(diǎn): |
標(biāo)準(zhǔn)
|
| 漏極至源極電壓(Vdss): |
60V
|
| 電流 - 連續(xù)漏極(Id) @ 25° C: |
8A
|
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: |
28 毫歐 @ 9.6A，10V
|
| Id 時(shí)的 Vgs(th)（最大）: |
4.5V @ 250µA
|
| 閘電荷(Qg) @ Vgs: |
57nC @ 10V
|
| 輸入電容 (Ciss) @ Vds: |
2900pF @ 30V
|
| 功率 - 最大: |
35W
|
| 安裝類型: |
表面貼裝
|
| 封裝/外殼: |
PowerPAK? SO-8 雙
|
| 供應(yīng)商設(shè)備封裝: |
PowerPAK? SO-8 Dual
|
| 包裝: |
帶卷 (TR)
|