| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI4500BDY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 8-SOIC | 423 | 1:$1.19000 25:$0.93600 100:$0.84240 250:$0.73320 500:$0.65520 1,000:$0.51480 |
| SI4500BDY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 8-SOIC | 0 | 2,500:$0.43680 5,000:$0.41496 12,500:$0.39780 25,000:$0.38688 62,500:$0.37440 |
| SI3586DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 6-TSOP | 695 | 1:$1.10000 25:$0.87000 100:$0.78300 250:$0.68152 500:$0.60900 1,000:$0.47850 |
| SI3586DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 6-TSOP | 695 | 1:$1.10000 25:$0.87000 100:$0.78300 250:$0.68152 500:$0.60900 1,000:$0.47850 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | N 和 P 溝道 |
| FET 特點(diǎn): | 邏輯電平門(mén) |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 6.6A，3.8A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 20 毫歐 @ 9.1A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 1.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 17nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.3W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-SOICN |
| 包裝: | 剪切帶 (CT) |