| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SH8K4TB1 | Rohm Semiconductor | MOSFET N-CH DUAL 30V 9A SOP8 | 0 | 2,500:$0.61740 5,000:$0.58653 10,000:$0.56228 25,000:$0.54684 |
| SH8M5TB1 | Rohm Semiconductor | MOSFET N/P-CH 30V SOP8 | 2,500 | 2,500:$0.65240 5,000:$0.61978 10,000:$0.59415 25,000:$0.57784 |
| SH8M5TB1 | Rohm Semiconductor | MOSFET N/P-CH 30V SOP8 | 4,878 | 1:$1.77000 25:$1.39800 100:$1.25820 250:$1.09512 500:$0.97860 1,000:$0.76890 |
| SH8M4TB1 | Rohm Semiconductor | MOSFET N+P 30V 9A/7A 8-SOIC | 12,500 | 2,500:$0.73000 5,000:$0.70300 10,000:$0.67600 |
| SH8M4TB1 | Rohm Semiconductor | MOSFET N+P 30V 9A/7A 8-SOIC | 1,724 | 1:$2.51000 25:$1.98000 100:$1.78200 250:$1.55100 500:$1.38600 1,000:$1.08900 |
| 類(lèi)別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | 2 個(gè) N 溝道（雙） |
| FET 特點(diǎn): | 邏輯電平門(mén) |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 9A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 17 毫歐 @ 9A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.5V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 21nC @ 5V |
| 輸入電容 (Ciss) @ Vds: | 1190pF @ 10V |
| 功率 - 最大: | 2W |
| 安裝類(lèi)型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-SOP |
| 包裝: | 帶卷 (TR) |