| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SIA533EDJ-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 12V 4.5A SC70-6 | 3,000 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
| SIS902DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 75V 1212-8 PPAK | 6,745 | 1:$0.90000 25:$0.69720 100:$0.61500 250:$0.53300 500:$0.45100 1,000:$0.35875 |
| SI7232DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V 1212-8 PPAK | 3,000 | 3,000:$0.33350 6,000:$0.31050 15,000:$0.29900 30,000:$0.28750 75,000:$0.28290 150,000:$0.27600 |
| SI4228DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V 8-SOIC | 2,500 | 2,500:$0.35000 5,000:$0.33250 12,500:$0.31875 25,000:$0.31000 62,500:$0.30000 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | N 和 P 溝道 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 12V |
| 電流 - 連續漏極(Id) @ 25° C: | 4.5A |
| 開態Rds(最大)@ Id, Vgs @ 25° C: | 34 毫歐 @ 4.6A,4.5V |
| Id 時的 Vgs(th)(最大): | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 15nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 420pF @ 6V |
| 功率 - 最大: | 7.8W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? SC-70-6 雙 |
| 供應商設備封裝: | PowerPAK? SC-70-6 雙 |
| 包裝: | 帶卷 (TR) |