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參數資料
型號: FDB20AN06A0
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench?? MOSFET 60V, 45A, 20m???
中文描述: 45 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263AB, 3 PIN
文件頁數: 5/11頁
文件大小: 617K
代理商: FDB20AN06A0
2003 Fairchild Semiconductor Corporation
FDB20AN06A0 / FDP20AN06A0 Rev. B
F
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
V
GS
= V
DS
, I
D
= 250
μ
A
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
0.90
0.95
1.00
1.05
1.10
1.15
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
100
1000
0.1
1
10
40
2000
60
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
3
6
9
12
15
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 30V
I
D
= 45A
I
D
= 9A
WAVEFORMS IN
DESCENDING ORDER:
相關PDF資料
PDF描述
FDP20AN06A0 N-Channel PowerTrench?? MOSFET 60V, 45A, 20m???
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相關代理商/技術參數
參數描述
FDB20AN06A0_B82014A 制造商:Fairchild Semiconductor Corporation 功能描述:
FDB20AN06A0_Q 功能描述:MOSFET N-Channel PT 6V 45A 2 mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB2100L 制造商:Eaton Corporation 功能描述:TYPE FDB, 2 POLE, 100A TRIP, 600V CLASS, LINE AND LOAD
FDB2125 制造商:Eaton Corporation 功能描述:TYPE FDB BREAKER 2P 125A/250VDC MAX 10K /600VAC MAX 14K AIC
FDB2150H08 制造商:Eaton Corporation 功能描述:FDB 2P 105 Amp Breaker W/Marine label