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參數資料
| 型號： | FDC2612 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200V N-Channel PowerTrench MOSFET |
| 中文描述： | 1100 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SUPERSOT-6 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 201K |
| 代理商： | FDC2612 |
February 2002
2002 Fairchild Semiconductor Corporation
FDC2612 Rev B3 (W)
FDC2612
200V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Features
1.1 A, 200 V.
R
DS(ON)
= 725 m
@ V
GS
= 10 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching speed
Low gate charge (8nC typical)
D
D
D
S
D
G
SuperSOT -6
6
5
4
1
2
3
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
200
±
20
1.1
4
1.6
0.8
55 to +150
Units
V
V
A
W
°
C
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Maximum Power Dissipation
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
30
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
.262
FDC2612
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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