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參數資料
| 型號： | FDC658P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 249K |
| 代理商： | FDC658P |
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-30
V
Breakdown Voltage Temp. Coefficient
-22
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= -24 V, V
GS
= 0 V
-1
μA
T
J
= 55
o
C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-1
-1.7
-3
V
Gate Threshold VoltageTemp.Coefficient
4.1
mV/
o
C
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -4.0 A
0.041
0.05
T
J
= 125
o
C
0.058
0.08
V
GS
= -4.5 V, I
D
= -3.4 A
V
GS
= -10 V, V
DS
= -5 V
V
DS
= -5V, I
D
= -4 A
0.06
0.075
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
-20
A
Forward Transconductance
9
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
DS
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
750
pF
Output Capacitance
220
pF
Reverse Transfer Capacitance
100
pF
t
D(on)
t
r
Turn - On Delay Time
V
DD
= -15 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 6
12
22
ns
Turn - On Rise Time
14
25
ns
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
Turn - Off Delay Time
24
38
ns
Turn - Off Fall Time
16
27
ns
Total Gate Charge
V
DS
= -15 V, I
D
= -4.0 A,
V
GS
= -5 V
8
12
nC
Gate-Source Charge
1.8
nC
Gate-Drain Charge
3
nC
I
S
V
SD
Continuous Source Diode Current
-1.3
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-0.76
-1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed
by design while R
θ
CA
is determined by the user's board design.
a. 78
o
C/W when mounted on a 1 in
2
pad of 2oz Cu on FR-4 board.
b. 156
o
C/W when mounted on a minimum pad of 2oz Cu on FR-4 board.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC658P Rev.C
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