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參數資料
| 型號： | FDD6296 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel Fast Switching PowerTrench? MOSFET |
| 中文描述： | 15 A, 30 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 105K |
| 代理商： | FDD6296 |
June 2004
2004 Fairchild Semiconductor Corporation
FDD6296/FDU6296 Rev C(W)
FDD6296/FDU6296
30V N-Channel Fast Switching PowerTrench
ò
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Power management
Features
50A, 30 V
R
DS(ON)
= 8.8 m
@ V
GS
= 10 V
R
DS(ON)
= 11.3 m
@ V
GS
= 4.5 V
Low gate charge
Fast switching
High performance trench technology for extremely
low R
DS(ON)
G
S
D
D-PAK
(TO-252)
G D S
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
30
±
20
50
15
100
52
3.8
1.6
–55 to +175
Units
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C
(Note 3)
A
@T
A
=25°C
Pulsed
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
(Note 1a)
(Note 1a)
Power Dissipation
(Note 3)
(Note 1a)
(Note 1b)
P
D
W
T
J
, T
STG
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Operating and Storage Junction Temperature Range
°
C
(Note 1)
2.9
40
96
°
C/W
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
FDD6296
FDD6296
FDU6296
FDU2696
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
F
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