- 您現在的位置：買賣IC網 > PDF目錄375772 > FDD6670AS (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel PowerTrench SyncFET PDF資料下載
參數資料
| 型號： | FDD6670AS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 76 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | TO-252, 3 PIN |
| 文件頁數： | 4/8頁 |
| 文件大小： | 195K |
| 代理商： | FDD6670AS |
F
FDD6670A, Rev. C
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient themal response will change depending on the circuit board design.
0
2
4
6
8
10
0
10
20
30
40
50
60
70
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 15A
V
DS
= 5V
10V
15V
0
1000
2000
3000
4000
5000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
10s
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
1ms
0
0.001
50
100
150
200
0.01
0.1
1
10
100
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 96
°
C/W
T
A
= 25
°
C
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 96
°
C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
相關PDF資料 |
PDF描述 |
|---|---|
| FDD6670AS_NL | 30V N-Channel PowerTrench SyncFET |
| FDD6672A | null30V N-Channel PowerTrench MOSFET |
| FDD6676A | 30V N-Channel PowerTrench SyncFET |
| FDD6676AS | 30V N-Channel PowerTrench SyncFET |
| FDD6676AS_NL | 30V N-Channel PowerTrench SyncFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6670AS_NL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDD6670S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6670S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FDD6672A | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6672A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
發布緊急采購，3分鐘左右您將得到回復。