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參數資料
| 型號： | FDG329N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER 220PF 1KVDC U2J 1206 |
| 中文描述： | 1500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 79K |
| 代理商： | FDG329N |
October 2001
2001 Fairchild Semiconductor International
FDG329N Rev C (W)
FDG329N
20V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low R
DS(ON)
and gate charge (Q
G
) in a small package.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Power management
Load switch
Features
1.5 A, 20 V.
R
DS(ON)
= 90 m
@ V
GS
= 4.5 V.
R
DS(ON)
= 115 m
@ V
GS
= 2.5 V
Fast switching speed
Low gate charge (3.3 nC typical)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability.
SC70-6
D
D
G
D
D
S
Pin 1
6
5
4
1
2
3
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
20
±
12
1.5
6
0.42
0.38
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
300
333
°
C/W
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.29
FDG329N
7’’
8mm
3000 units
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDG330P | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG330P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDG330P_Q | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG332PZ | 功能描述:MOSFET -20V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG361N | 功能描述:MOSFET N-Ch PowerTrench Specified 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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