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參數資料
| 型號： | FDH15N50 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET |
| 中文描述： | 15 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 3/6頁 |
| 文件大小： | 194K |
| 代理商： | FDH15N50 |
2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 RevD2
F
Typical Characteristics
Figure 1.
Output Characteristics
Figure 2.
Output Characteristics
Figure 3.
Transfer Characteristics
Figure 4. Normalized Drain To Source On
Resistance vs Junction Temperature
Figure 5. Capacitance vs Drain To Source
Voltage
Figure 6. Gate Charge Waveforms For Constant
Gate Current
1
10
100
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
V
GS
DESCENDING
10V
6.5V
6V
5.5V
5V
4.5V
T
J
= 25
o
C
1
10
100
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
PULSE DURATION = 80μs
V
GS
DESCENDING
10V
6V
5.5V
5V
4.5V
4V
T
J
= 175
o
C
0
3.0
10
20
30
40
50
60
3.5
4.0
4.5
5.0
5.5
6.0
6.5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
TJ = 25
o
C
TJ = 175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
VDD = 100V
N
TJ, JUNCTION TEMPERATURE (
o
C)
0
-50
0.5
1.0
1.5
2.0
2.5
3.5
-25
0
25
50
75
100
150
175
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 7.5A
125
3.0
10
100
1000
4000
1
10
100
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
0
3
6
12
15
0
10
20
30
40
V
G
,
Qg, GATE CHARGE (nC)
I
D
= 15A
9
50
250V
400V
100V
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