- 您現在的位置：買賣IC網 > PDF目錄375777 > FDN338 (Fairchild Semiconductor Corporation) P-Channel Logic Level Enhancement Mode Field Effect Transistor PDF資料下載
參數資料
| 型號： | FDN338 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | P溝道增強模式的邏輯電平場效應晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 85K |
| 代理商： | FDN338 |
FDN338P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
March 1998
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDN338P
Units
V
DSS
Drain-Source Voltage
-20
V
V
GSS
Gate-Source Voltage - Continuous
±8
V
I
D
Drain/Output Current - Continuous
-1.6
A
- Pulsed
-5
P
D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
FDN338P Rev.D
-1.6 A, -20 V, R
DS(ON)
= 0.13
@ V
GS
= -4.5 V
R
DS(ON)
= 0.18
@ V
GS
= -2.5 V.
Industry standard outline SOT-23 surface mount
package using proprietary SuperSOT
TM
-3 design for
superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
SuperSOT
TM
-3 P-Channel logic level enhancement mode
power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited for
low voltage applications in notebook computers, portable
phones, PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are needed
in a very small outline surface mount package.
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-3
G
D
S
SuperSOT -3
338
D
S
G
SuperSOT
TM
-6
1998 Fairchild Semiconductor Corporation
相關PDF資料 |
PDF描述 |
|---|---|
| FDN338P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN339AN | N-Channel 2.5V Specified PowerTrench MOSFET |
| FDN340 | Single P-Channel, Logic Level, PowerTrench MOSFET |
| FDN340P | Single P-Channel, Logic Level, PowerTrench MOSFET |
| FDN342P | P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDN338P | 功能描述:MOSFET SSOT-3 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| fdn338p | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-CH 20V 1.6A 3-SSOT RL |
| FDN338P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN338P_G | 制造商:Fairchild 功能描述:20V, 130MR, MOSFET, SOT23 |
| FDN338P_Q | 功能描述:MOSFET SSOT-3 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。