- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375779 > FDP6644S (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel PowerTrench SyncFET⑩ PDF資料下載
參數(shù)資料
| 型號： | FDP6644S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench SyncFET⑩ |
| 中文描述： | 55 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 160K |
| 代理商： | FDP6644S |
FDP6644S/FDB6644S Rev C1 (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6644S.
Figure 12. FDP6644S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6644).
Figure 13. Non-SyncFET (FDP6644) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
0.00001
0.0001
0.001
0.01
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T
A
= 100
o
C
T
A
= 25
o
C
F
C
Time: 12.5ns/div
C
Time: 12.5ns/div
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDP6670AL | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDP6670AS | 30V N-Channel PowerTrench SyncFET |
| FDP6670AS_NL | 30V N-Channel PowerTrench SyncFET |
| FDP7030 | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDP7030BL | N-Channel Logic Level PowerTrenchTM MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDP6670AL | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP6670AL_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP6670AS | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
| FDP6670AS_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench㈢ SyncFET⑩ |
| FDP6670AS_NL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。