- 您現在的位置：買賣IC網 > PDF目錄375780 > FDQ7238S (FAIRCHILD SEMICONDUCTOR CORP) Dual Notebook Power Supply N-Channel PowerTrench�� in SO-14 Package PDF資料下載
參數資料
| 型號： | FDQ7238S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench�� in SO-14 Package |
| 中文描述： | 11 A, 30 V, 0.0145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-14/11 |
| 文件頁數： | 6/9頁 |
| 文件大小： | 244K |
| 代理商： | FDQ7238S |
FDQ7238S Rev A1 (W)
Typical Characteristics : Q2
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDQ7238S Q2.
TIME : 12nS/div
C
Figure 12. FDQ7238S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without
SyncFET(FDS6644).
TIME : 12.5nS/div
C
Figure 13. Non-SyncFET (FDS6644) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage
at high temperature and high reverse voltage. This
will increase the power dissipated in the device.
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T
A
= 25
o
C
T
A
= 100
o
C
T
A
= 125
o
C
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature
.
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDQ7244S | Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package |
| FDQ7698S | Dual Notebook Power Supply N-Channel PowerTrench |
| FDR4410 | N-Channel Enhancement Mode Field Effect Transistor |
| FDR4420A | Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDR6580 | N-Chennal 2.5V Specified PowerTrench⑩ MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDQ7244S | 功能描述:MOSFET USE 512-FDQ7238S Notebook Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDQ7698S | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR0301-10 | 制造商:MISC. CONNECTORS 功能描述: |
| FDR0301-24-00-285 | 制造商:MISC. CONNECTORS 功能描述: |
| FDR08CG08 | 制造商:Curtis Industries 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。