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參數(shù)資料
| 型號(hào)： | FDR6580 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-Chennal 2.5V Specified PowerTrench⑩ MOSFET |
| 中文描述： | 11200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 241K |
| 代理商： | FDR6580 |
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Electrical Characteristics
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage, Forward
I
GSSR
Gate-Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
20
V
μ
A
μ
A
μ
A
1
10
-10
ON CHARACTERISTICS
(Note 2)
V
GS(TH)
Gate Threshold Voltage
R
DS(ON)
Static Drain-Source
On-Resistance
I
D(ON)
On-State Drain Current
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 4.5 V, I
D
= 11 A
V
GS
= 2.5 V, I
D
= 9.3 A
V
GS
= 4.5 V, V
DS
= 5 V
0.4
1.5
0.009
0.013
V
25
A
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward
Voltage
1.5
1.2
A
V
V
GS
= 0 V, I
S
= 1.5 A
(Note 2)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDR6580_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel 2.5V Specified PowerTrench MOSFET |
| FDR6674A | 功能描述:MOSFET SSOT-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR6674A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-8 |
| FDR6678A | 功能描述:MOSFET SSOT-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FD-R80 | 制造商:Panasonic Electric Works 功能描述:FIBER SENSORM6 DIF. ELBOW TYPE 2M FREE 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
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