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參數資料
| 型號： | FDS6699S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 21000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 5/6頁 |
| 文件大小： | 526K |
| 代理商： | FDS6699S |
5
www.fairchildsemi.com
FDS6699S Rev. D
F
Typical Characteristics
(continued)
SyncFET Schottky Body Diode Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in paral-
lel with PowerTrench MOSFET. This diode exhibits similar char-
acteristics to a discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery characteristic
of the FDS6699S.
Figure 12. FDS6699S SyncFET body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Figure 13. SyncFET body diode reverse leakage
versus drain-source voltage and temperature.
C
TIME : 12.5ns/div
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
T
A
= 25
o
C
T
A
= 100
o
C
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| FDS6812 | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6812A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6814 | Dual N-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| FDS6815 | Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS6812 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6812A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6814 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| FDS6815 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| FDS6875 | 功能描述:MOSFET SO-8 DUAL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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