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參數資料
| 型號： | FDS7764A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 15 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 276K |
| 代理商： | FDS7764A |
August 2000
PRELIMINARY
2000 Fairchild Semiconductor Corporation
FDS7764A Rev B1(W)
FDS7764A
30V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
Synchronous Rectifier
DC/DC converter
Features
15 A, 30 V.
R
DS(ON)
= 7.5 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling
capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
30
±
12
15
50
2.5
1.2
1.0
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
°
C/W
°
C/W
°
C/W
(Note 1c)
50 (10 sec)
30
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS7764A
FDS7764A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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