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參數資料
| 型號： | FS1K |
| 廠商： | 濟南固锝電子器件有限公司 |
| 英文描述： | 1.0 AMPS. FAST RECOVERY SILICON RECTIFIER |
| 中文描述： | 1.0安培?？旎謴驼鞴?/td> |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 621K |
| 代理商： | FS1K |
FS1A
THRU
FS1M
1 Amp Fast Recovery
Silicon Rectifier
50 to 1000 Volts
Features
For Surface Mount Applications
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 250
°
C for 10 Seconds At Terminals
Superfast Recovery Times For High Efficiency
Maximum Ratings
Operating Temperature: -50
°
C to +150
°
C
Storage Temperature: -50
°
C to +150
°
C
Maximum Thermal Resistance; 15
°
C/W Junction To Lead
MCC
Catalog
Number
Peak Reverse
Voltage
FS1A
FS1A
FS1B
FS1B
FS1D
FS1D
FS1G
FS1G
FS1J
FS1J
FS1K
FS1K
FS1M
FS1M
1000V
Device
Marking
Maximum
Recurrent
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
50V
100V
200V
400V
600V
800V
35V
70V
140V
280V
420V
560V
700V
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Average Forward
current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
FS1A-G
FS1J
FS1K-M
Typical Junction
Capacitance
*Pulse test: Pulse width 200
μ
sec, Duty cycle 2%
I
F(AV)
1.0A
T
J
= 90
°
C
I
FSM
30A
8.3ms, half sine
V
F
1.30V
I
FM
= 1.0A;
T
J
= 25
°
C*
I
R
5
μ
A
200
μ
A
T
J
= 25
°
C
T
J
= 125
°
C
T
rr
150ns
250ns
500ns
50pF
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
C
J
Measured at
1.0MHz, V
R
=4.0V
www.
mc c semi
.c om
DO-214AC
(SMAJ) (High Profile)
H
J
E
F
G
A
B
D
C
Cathode Band
0.070”
0.090”
0.085”
SUGGESTED SOLDER
PAD LAYOUT
DIMENSIONS
INCHES
MIN
.078
.067
.002
---
.035
.065
.205
.160
.100
MM
DIM
A
B
C
D
E
F
G
H
J
MAX
.116
.089
.008
.02
.055
.09
6
.224
.180
.112
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
MAX
2.95
2.25
.20
.51
1.40
2.
45
5.69
4.57
2.84
NOTE
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
M C C
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