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參數資料
| 型號： | FSJ9055D1 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| 中文描述： | 55 A, 60 V, 0.029 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁數： | 1/8頁 |
| 文件大小： | 66K |
| 代理商： | FSJ9055D1 |
3-221
Semiconductor
June 1998
Features
55A, -60V, r
DS(ON)
= 0.029
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 6.0nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Formerly available as type TA17750.
Description
The Discrete Products Operation of Harris Semiconductor
has developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose hard-
ness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Harris portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Harris Semiconductor for any
desired deviations from the data sheet.
Symbol
Package
TO-254AA
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Commercial
FSJ9055D1
10K
TXV
FSJ9055D3
100K
Commercial
FSJ9055R1
100K
TXV
FSJ9055R3
100K
Space
FSJ9055R4
G
D
S
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
S
G
D
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
Harris Corporation 1998
File Number
4415.1
FSJ9055D,
FSJ9055R
55A, -60V, 0.029 Ohm, Rad Hard,
SEGR Resistant, P-Channel Power MOSFETs
相關PDF資料 |
PDF描述 |
|---|---|
| FSJ9055R1 | 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9055R3 | 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9055D | 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9055D3 | 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9055R | 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FSJ9055D3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9055R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9055R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9055R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| FSJ9055R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
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