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參數資料
| 型號： | FZT796A |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| 中文描述： | 0.5 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 文件頁數： | 1/2頁 |
| 文件大小： | 78K |
| 代理商： | FZT796A |
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
*
200 Volt V
CEO
*
Gain of 250 at I
C
=0.3 Amps
*
Very low saturation voltage
APPLICATIONS
*
Battery powered circuits
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT696B
FZT796A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-200
V
Collector-Emitter Voltage
-200
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-1
A
Continuous Collector Current
-0.5
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
V
(BR)CBO
-200
V
I
C
=-100
μ
A
I
C
=-10mA*
V
(BR)CEO
-200
V
Emitter-Base
V
(BR)EBO
I
CBO
-5
V
I
E
=-100
μ
A
V
CB
=-150V
Collector Cut-Off Current
-0.1
μ
A
μ
A
Emitter Cut-Off Current
I
EBO
-0.1
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.2
-0.3
-0.3
V
V
V
I
C
=-50mA, I
B
=-2mA*
I
C
=-100mA, I
B
=-5mA*
I
C
=-200mA, I
B
=-20mA*
I
C
=-200mA,I
B
=-20mA*
I
C
=-200mA,V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
I
C
=-400mA, V
CE
=-10V*
I
=-50mA, V
CE
=-5V
f=50MHz
Base-EmitterSaturationVoltage V
BE(sat)
Base-EmitterTurn-OnVoltage
-0.95
V
V
BE(on)
h
FE
-0.67
V
Static Forward Current
Transfer Ratio
300
300
250
100
800
Transition Frequency
f
T
100
MHz
Input Capacitance
C
ibo
C
obo
t
on
t
off
225
pF
V
EB
=-0.5V, f=1MHz
V
CB
=-10V, f=1MHz
I
C
=-100mA, I
B1
=-10mA
I
B2
=-10mA, V
CC
=-50V
Output Capacitance
12
pF
Switching Times
100
3200
ns
ns
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT796A
C
C
E
B
3 - 255
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