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參數資料
| 型號： | HMC356LP3E |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 350 MHz - 550 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-16 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 272K |
| 代理商： | HMC356LP3E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC356LP3 / 356LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
v03.0610
General Description
Features
Functional Diagram
The HMC356LP3 & HMC356LP3E are high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers
is ideal for GSM & CDMA cellular basestation and
Mobile Radio front-end receivers operating between
350 and 550 MHz. This LNA has been optimized to
provide 1.0 dB noise figure, 17 dB gain and +38 dBm
output IP3 from a single supply of +5V @ 104 mA.
Input and output return losses are 15 dB typical, with
the LNA requiring only four external components to
optimize the RF input match, RF ground and DC bias.
For applications which require improved noise figure,
please see the HMC616LP3(E).
Noise Figure: ≤1.0 dB
+38 dBm Output IP3
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5V @ 104 mA
50 Ohm Matched Output
Electrical Specifications, T
A = +25° C, Vs = +5V
Typical Applications
The HMC356LP3 / HMC356LP3E is ideal for
basestation receivers:
GSM 450 & GSM 480
CDMA 450
Private Land Mobile Radio
Parameter
Min.
Typ.
Max.
Units
Frequency Range
350 - 550
MHz
Gain
15
17
dB
Gain Variation Over Temperature
0.0032
0.010
dB / °C
Noise Figure
1.0
1.4
dB
Input Return Loss
17
dB
Output Return Loss
12
dB
Reverse Isolation
24
dB
Output Power for 1dB Compression (P1dB)
17
21
dBm
Saturated Output Power (Psat)
22.5
dBm
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing)
34
38
dBm
Supply Current (Idd)
104
mA
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相關代理商/技術參數 |
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| HMC356LP3ETR | 制造商:Hittite Microwave Corp 功能描述:IC MMIC AMP LNA HI IP3 16-QFN |
| HMC3587LP3BE | 功能描述:RF Amplifier IC General Purpose 4GHz ~ 10GHz 12-SMT (3x3) 制造商:analog devices inc. 系列:- 包裝:剪帶 零件狀態:有效 頻率:4GHz ~ 10GHz P1dB:11dBm 增益:14.5dB 噪聲系數:4.5dB RF 類型:通用 電壓 - 電源:5V 電流 - 電源:47mA 測試頻率:4GHz ~ 5GHz 封裝/外殼:12-VFQFN 裸露焊盤 供應商器件封裝:12-SMT（3x3） 標準包裝:1 |
| HMC3587LP3BETR | 功能描述:RF Amplifier IC General Purpose 4GHz ~ 10GHz 12-SMT (3x3) 制造商:analog devices inc. 系列:- 包裝:剪切帶（CT） 零件狀態:停產 頻率:4GHz ~ 10GHz P1dB:11dBm 增益:14.5dB 噪聲系數:4.5dB RF 類型:通用 電壓 - 電源:5V 電流 - 電源:47mA 測試頻率:4GHz ~ 5GHz 封裝/外殼:12-VFQFN 裸露焊盤 供應商器件封裝:12-SMT（3x3） 標準包裝:1 |
| HMC358MS8G | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz |
| HMC358MS8G_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz |
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