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參數資料
| 型號： | HMC659 |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 15000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3.115 X 1.63 MM, 0.10 MM HEIGHT, DIE-7 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 290K |
| 代理商： | HMC659 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC659
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 15 GHz
v01.0708
General Description
Features
Functional Diagram
The HMC659 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC and
15 GHz. The amplifier provides 19 dB of gain,
+35 dBm output IP3 and +26.5 dBm of output power
at 1 dB gain compression while requiring 300 mA
from a +8V supply. Gain flatness is excellent at ±0.5
dB from DC to 10 GHz making the HMC659 ideal for
EW, ECM, Radar and test equipment applications.
The HMC659 amplifier I/Os are internally matched
to 50 ohms facilitating integration into Mutli-Chip-
Modules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of mini-
mal length 0.31 mm (12 mils).
P1dB Output Power: +26.5 dBm
Gain: 19 dB
Output IP3: +35 dBm
Supply Voltage: +8V @ 300 mA
50 Ohm Matched Input/Output
Die Size: 3.115 x 1.630 x 0.1 mm
Typical Applications
The HMC659 is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Fiber Optics
Electrical Specifications, T
A = +25° C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
DC - 6
6 - 11
11 - 15
GHz
Gain
16.1
19.1
15.5
18.5
14.8
17.8
dB
Gain Flatness
±0.5
±0.15
±0.6
dB
Gain Variation Over Temperature
0.013
0.018
0.025
dB/ °C
Input Return Loss
19
17
15
dB
Output Return Loss
18
17
15
dB
Output Power for 1 dB Compression (P1dB)
23
25.5
24
26.5
22.5
25
dBm
Saturated Output Power (Psat)
26
27
dBm
Output Third Order Intercept (IP3)
35
32
29
dBm
Noise Figure
2.5
2
3
dBc
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.8V Typ.)
300
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.
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| HMC65DRAH | 功能描述:CONN EDGECARD 130PS R/A .100 SLD RoHS:是 類別:連接器，互連式 >> Card Edge 系列:- 標準包裝:1 系列:- 卡類型:非指定 - 雙邊 類型:母頭 Number of Positions/Bay/Row:36 位置數:72 卡厚度:0.062"（1.57mm） 行數:2 間距:0.100"（2.54mm） 特點:- 安裝類型:面板安裝 端子:焊接孔眼 觸點材料:磷青銅 觸點表面涂層:金 觸點涂層厚度:10µin（0.25µm） 觸點類型：:全波紋管 顏色:藍 包裝:管件 法蘭特點:頂部安裝開口，螺紋插件，4-40 材料 - 絕緣體:聚對苯二甲酸丁二酯（PBT） 工作溫度:-65°C ~ 125°C 讀數:雙 |
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