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參數資料
| 型號： | IRFU322 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.6A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 2.6AI（四）|對251AA |
| 文件頁數： | 4/7頁 |
| 文件大小： | 117K |
| 代理商： | IRFU322 |
2002 Fairchild Semiconductor Corporation
IRFR320, IRFU320 Rev. B
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
I
D
,
100
100
1
10
1
0.1
1000
BY r
DS(ON)
AREA IS LIMITED
10
μ
s
100
μ
s
1ms
10ms
DC
SINGLE PULSE
T
J
= MAX RATED
T
= 25
o
C
I
D
,
0
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
80
120
160
1
2
3
4
5
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 5.5V
V
GS
= 5.0V
V
GS
= 6.0V
0
0
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
6
9
15
I
D
,
12
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 5.5V
V
GS
= 6.0V
V
GS
= 5.0V
V
GS
= 4.0V
1
2
3
4
5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
-2
10
1
0.1
I
D
,
T
J
= 150
o
C
T
J
= 25
o
C
10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
≥
350V
I
D
, DRAIN CURRENT (A)
r
D
,
10
8
6
4
2
00
3
6
9
12
15
V
GS
= 20V
V
GS
= 10V
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
3.0
1.8
1.2
0.6
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
2.4
80
160
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 1.7A
IRFR320, IRFU320
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