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參數(shù)資料
| 型號： | IRLR8103 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 89A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 89A條（丁）|對252AA |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 38K |
| 代理商： | IRLR8103 |
www.irf.com
2
IRLR8103/IRLR8503
Parameter
Min
Typ
Max
Min
Typ
Max Units
Conditions
Diode Forward
Voltage*
V
SD
–
–
0.9
–
–
1.0
V
I
S
= 15A
, V
GS
= 0V
Reverse Recovery
Charge
Q
rr
–
100
–
–
89
–
di/dt
~
700A/μs
nC
V
DS
= 16V, V
GS
= 0V, I
S
di/dt = 700A/μs
(with 10BQ040)
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
Reverse Recovery
Charge (with Parallel
Schottky)
Q
rr(s)
–
77
–
–
75
–
Parameter
Min
Typ
Max
Min
Typ
Max Units
Conditions
Drain-to-Source
Breakdown Voltage*
BV
DSS
30
–
–
30
–
–
V
V
GS
= 0V, I
D
= 250μA
Static Drain-Source
R
DS(ON)
–
6
7.0
12
16
m
m
V
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
= 15A
V
DS
= V
GS
,I
D
= 250μA
V
DS
= 24V, V
GS
= 0
V
DS
= 24V, V
GS
= 0,
Tj = 100°C
on Resistance*
Gate Threshold Voltage*
–
7
–
8.5
–
14
–
18
–
V
GS(th)
I
DSS
2.0
1.0
Drain-Source Leakage
–
–
30
–
–
30
Current*
–
–
150
–
–
150
μA
Gate-Source Leakage
Current*
I
GSS
–
–
±100
–
–
±100
nA
V
GS
= ±20V
Total Gate Chg Cont FET*
Q
G
Q
G
Q
GS1
–
50
–
–
15
–
V
GS
=5V, I
D
=15A, V
DS
=16V
V
GS
= 5V, V
DS
< 100mV
V
DS
= 16V, I
D
= 15A
Total Gate Chg Sync FET*
–
45
–
–
13
–
Pre-Vth
Gate-Source Charge
–
17
–
–
3.7
–
Post-Vth
Gate-Source Charge
Q
GS2
–
4.3
–
–
1.3
–
nC
Gate to Drain Charge
Q
GD
Q
sw
Q
oss
R
G
t
d
(on)
t
r
t
d
(off)
t
f
C
iss
C
oss
–
16
–
–
4.1
–
Switch Chg(Q
gs2
+ Q
gd
)*
Output Charge*
–
20.3
–
–
5.4
–
–
23
–
–
23
–
V
DS
= 16V, V
GS
= 0
Gate Resistance
–
1.5
–
–
2.0
–
Turn-on Delay Time
–
TBD
–
–
TBD
–
V
DD
= 16V, I
D
= 15A
V
GS
= 5V
Clamped Inductive Load
Rise Time
–
TBD
–
–
TBD
–
ns
Turn-off Delay Time
–
TBD
–
–
TBD
–
Fall Time
–
TBD
–
–
TBD
–
See test diagram Fig 19.
Input Capacitance
–
TBD
–
–
TBD
–
Output Capacitance
–
TBD
–
–
TBD
–
pF
V
DS
= 16V, V
GS
= 0
Reverse Transfer Capacitance C
rss
–
TBD
–
–
TBD
–
Electrical Characteristics
Source-Drain Rating & Characteristics
IRLR8103
IRLR8503
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
300 μs; duty cycle
≤
2%.
When mounted on 1 inch square copper board, t < 10 sec.
Calculated continuous current based on maximum allowable
Junction temperature; packagle limitation current = 20A
*
Devices are 100% tested to these parameters.
Typ = measured - Q
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IRLR8103TR | 功能描述:MOSFET N-CH 30V 89A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRLR8103TRL | 功能描述:MOSFET N-CH 30V 89A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRLR8103TRR | 功能描述:MOSFET N-CH 30V 89A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRLR8103V | 制造商:International Rectifier 功能描述:MOSFET N D-PAK 制造商:Int'L Rectifier 功能描述:Trans MOSFET N-CH 30V 91A 3-Pin(2+Tab) DPAK T/R |
| IRLR8103VHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 91A 3-Pin(2+Tab) DPAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 91A 3PIN DPAK - Rail/Tube |
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