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參數資料
| 型號： | IRLU024 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直|第14A條（丁）|對251AA |
| 文件頁數： | 2/10頁 |
| 文件大小： | 110K |
| 代理商： | IRLU024 |
IRLR/U014N
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 6A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 6A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
37
48
1.3
56
71
V
nS
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
10
40
A
Starting T
J
= 25
°
C, L = 1.96mH
R
G
= 25
, I
AS
= 6A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300μs; duty cycle
≤
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact
I
SD
≤
6.0A, di/dt
≤
210A/μs, V
DD
≤
V
,
T
J
≤
175
°
C
Notes:
Parameter
Min.
55
–––
–––
–––
1.0
3.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.056
–––
–––
0.14
–––
0.21
–––
–––
–––
–––
–––
25
–––
250
–––
100
–––
-100
–––
7.9
–––
1.4
–––
4.4
6.5
–––
47
–––
12
–––
23
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 6A
V
GS
= 4.5V, I
D
= 5A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 6A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 150
°
C
V
GS
= 16V
V
GS
= -16V
I
D
= 6A
V
DS
= 44V
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 6A
R
G
= 6.2
,
V
GS
= 5.0V
R
D
= 4.5
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
V
V/
°
C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
265
80
38
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
I
GSS
S
D
G
L
S
Internal Source Inductance
–––
7.5
–––
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance
–––
4.5
–––
I
DSS
Drain-to-Source Leakage Current
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相關代理商/技術參數 |
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|---|---|
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