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參數資料
| 型號： | JAN1N3649 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 整流器 |
| 英文描述： | 3.3 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封裝： | METAL, DO-4, 1 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 59K |
| 代理商： | JAN1N3649 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY POWER RECTIFIER
Qualified per MIL-PRF-19500/260
Glass Passivated Die
Glass to Metal Seal Construction
25 Amps Surge Rating VRRM to 1000 Volts
T4-LDS-0135 Rev. 1 (091678)
Page 1 of 3
DEVICES
LEVELS
1N1124A
1N1124RA
1N3649
1N3649R
JAN
1N1126A
1N1126RA
1N3650
1N3650R
1N1128A
1N1128RA
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
1N1124A
1N1126A
1N1128A
1N3649
1N3650
1N1124RA
1N1126RA
1N1128RA
1N3649R
1N3650R
VRWM
200
400
600
800
1000
V
Average Forward Current, TC = 150°
IF
3.3
A
Peak Surge Forward Current @ tp = 8.3ms, half sinewave,
TC = 150°C, T = 1/120s
IFSM
25
A
Thermal Resistance, Junction to Case
Rθjc
2.0
°C/W
Operating Case Temperature Range
TC
-65°C to 150°C
°C
Storage Temperature Range
Tstg
-65°C to 200°C
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward Voltage
IF = 10A, Tj = 25°C*
VF
2.2
V
Reverse Current
VR = 200, Tj = 25°C
VR = 400, Tj = 25°C
VR = 600, Tj = 25°C
VR = 800, Tj = 25°C
VR = 1000, Tj = 25°C
1N1124A
1N1126A
1N1128A
1N3649
1N3650
1N1124RA
1N1126RA
1N1128RA
1N3649R
1N3650R
IR
5
μA
Reverse Current
VR = 200, Tj = 150°C
VR = 400, Tj = 150°C
VR = 600, Tj = 150°C
VR = 800, Tj = 150°C
VR = 1000, Tj = 150°C
1N1124A
1N1126A
1N1128A
1N3649
1N3650
1N1124RA
1N1126RA
1N1128RA
1N3649R
1N3650R
IR
200
μA
* Pulse test: Pulse width 300 sec, Duty cycle 2%
Note:
DO-203AA(DO-4)
相關PDF資料 |
PDF描述 |
|---|---|
| JAN1N1128A | 3.3 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA |
| JAN1N1126RA | 3.3 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AA |
| JAN1N3650 | 3.3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-203AA |
| JAN1N3649R | 3.3 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AA |
| JAN1N1128RA | 3.3 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| JAN1N3649R | 制造商:Microsemi Corporation 功能描述:Diode Switching 800V 3.3A 2-Pin DO-4 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 800V 3.3A 2PIN DO-203AA - Bulk |
| JAN1N3650 | 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 1KV 3.3A 2PIN DO-203AA - Bulk |
| JAN1N3650R | 制造商:Microsemi Corporation 功能描述:Diode Switching 1KV 3.3A 2-Pin DO-4 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 1KV 3.3A 2PIN DO-203AA - Bulk |
| JAN1N3671A | 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk |
| JAN1N3671AR | 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk |
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