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參數資料
| 型號： | JAN1N5712UB |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.075 A, SILICON, SIGNAL DIODE |
| 封裝： | LEADLESS, CERAMIC PACKAGE-3 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 50K |
| 代理商： | JAN1N5712UB |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
SCHOTTKY BARRIER DIODES
LEADLESS PACKAGE FOR SURFACE MOUNT
Qualified per MIL-PRF-19500/444
T4-LDS-0174 Rev. 1 (101095)
Page 1 of 2
DEVICES
QUALIFIED LEVELS
JAN
JANTX
JANTXV
JANS
1N5711UB
1N5711UBCA
1N5711UBCC
1N5711UBD
1N5712UB
1N5712UBCA
1N5712UBCC
1N5712UBD
MAXIMUM RATING AT 25°C
3 PIN
Operating Temperature:
Storage Temperature:
Operating Current:
Derating:
-65°C to +150°C
5711 types
5712 types
all types
:33mA dc @ TSP = +140°C
:75mA dc @ TSP = +130°C
:Derate to 0 (zero) mA dc @ +150°C
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
NOTE:
1.
Effective Minority Carrier Lifetime (
τ) is 100 Pico Seconds
TYPE
NUMBER
MINIMUM
BEAKDOWN
VOLTAAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
REVERSE
LEAKAGE
CURRENT
MAXIMUM
CAPACITANCE
@
VR = 0 VOLTS
f = 1.0MHz
ESDS
CLASS
VBR @ 10μA
VF @ 1mA
VF @ IF
IR @ VR
CT
VOLTS
@ mA
nA
VOLTS
PICO FARADS
1N5711
70
0.41
1.0 @ 15
200
50
2.0
1
1N5712
20
0.41
1.0 @ 35
150
16
2.0
1
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| JANTX1N5711UBCC | 0.033 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| JANTXV1N5711UBD | 0.033 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| JANS1N5712UBCC | 0.075 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| JAN1N5712UBD | 0.075 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| JAN1N5711UBCA | 0.033 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
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