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參數資料
| 型號： | LN66L(LN66(L)) |
| 英文描述： | LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode |
| 中文描述： | LN66L（LN66（長）） -砷化鎵紅外發光二極管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 42K |
| 代理商： | LN66L(LN66(L)) |
1
Infrared Light Emitting Diodes
LN66L
GaAs Infrared Light Emitting Diode
2.54
2-0.8 max.
2-0.6
±
0.15
7
±
0
0
±
0
2
±
1
5
±
0
2
±
1
1
1
1
2
N
1: Cathode
2: Anode
Unit : mm
5.0
±
0.2
±
0
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
P
O*
λ
P
λ
V
F
I
R
C
t
θ
Conditions
min
5
typ
8
950
50
1.3
max
Unit
mW
nm
nm
V
μ
A
pF
deg.
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
1.6
10
35
25
The angle in which radiant intencity is 50%
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
160
100
1.5
3
–25 to +85
– 40 to +100
Unit
mW
mA
A
V
C
C
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
f = 100 Hz, Duty cycle = 0.1 %
For optical control systems
Features
High-power output, high-efficiency :P
O
= 8 mW (typ.)
Emitted light spectrum suited for silicon photodetectors
Good radiant power output linearity with respect to input current
Wide directivity :
θ
= 25 deg. (typ.)
Transparent epoxy resin package
Long lead-wire type
*
P
O
Classifications
Class
R
S
P
O
(mW)
5 to 8
>7
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相關代理商/技術參數 |
參數描述 |
|---|---|
| LN66NC(LN66(NC)) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes |
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| LN671 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:GaAlAs Infrared Light Emitting Diode |
| LN69 | 功能描述:IR LED 940NM 15 DEG T1 RoHS:是 類別:光電元件 >> 紅外發射極 系列:- 標準包裝:1,200 系列:- 電流 - DC 正向(If):100mA 輻射強度(le)最小值@正向電流:27mW/sr @ 100mA 波長:940nm 正向電壓:1.6V 視角:40° 方向:頂視圖 安裝類型:通孔 封裝/外殼:徑向 包裝:帶卷 (TR) |
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