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參數資料
| 型號： | MBC13900 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon Low Noise Transistor |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數： | 11/26頁 |
| 文件大?。?/td> | 813K |
| 代理商： | MBC13900 |
Applications Information
MOTOROLA
MBC13900
Technical Data
For More Information On This Product,
Go to: www.freescale.com
11
Figure 19. 900 MHz LNA Board Layout
3.2 1900 MHz LNA
Figure Figure 20 shows the schematic and Figure 21 shows the component placement for a 1900 MHz
LNA. The design goals for the circuit are:
NF < 1.35 dB
Gain > 14 dB
Return Loss > 10 dB, input and output
Unconditional stability from 100 MHz to 6 GHz.
Typical performance that can be expected from this circuit at 3.0 V V
CC
and 5.0 mA is listed in Table 5.
The component values can be changed to enhance the performance of a particular parameter but usually at
the expense of another. Gain can be improved by sacrificing stability (R3 and R5). Input return loss can be
sacrificed to improve noise figure. Input return loss can be improved at the expense of noise figure (C3,
C7, L4). IIP3 can be improved by increasing emitter degeneration (L3) and bias current (R2). Unused
traces are available on the PCB to add emitter degeneration at leads 1 and 3 of the device.
Table 4. Typical 900 MHz LNA Performance
V
CC
I
C
(mA)
NF
(dB)
50
Insertion
Gain (dB)
Output IP3
(dBm)
Input Return
Loss (dB)
Output
Return
Loss (dB)
3.0
5.0
1.2
19.7
15
10.1
10.2
3.5
6.1
1.21
20.2
17.6
10.8
10.8
Gnd
V
CC
C1
R
C4
R
L
C2
R3
C5
R2
R
L
C
C3
R6
Component Value
C1
C2
C3
C4
C5
C6
L1
L2
L3
R1
R2
R3
R4
R5
R6
Vias
PCB
Comments
Optional Bypassing
DC Block and S
22
DC Block and S
Broadband bypass
Broadband bypass
IIP3 improvement
Toko LL1608-FS, match, bias
Toko LL1608-FH, match, bias
Emitter L on board (distance to GND vias)
Bias
Bias
Stability, S
22
Jumper
Stability, S
22
Jumper
D = 15 mil
ε
r
=4.5, h=25 mil, t=1.75 mil
1.0 μF
3.3 pF
12 pF
0.01 μF
1.0 μF
0.3 pF
6.8 nH
5.6 nH
<0.5 nH
133
49.9 k
16.5
0
3.9
0
FR4
F
Freescale Semiconductor, Inc.
n
.
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相關代理商/技術參數 |
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| MBC13900/D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon Low Noise Transistor |
| MBC13900NT1 | 功能描述:兩極晶體管 - BJT DISCRETE BJT PB FREE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBC13900T1 | 功能描述:IC TRANS NPN RF LOW NOISE SC70-4 RoHS:否 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| MBC13901 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:NPN Silicon Low Noise Transistor |
| MBC13916 | 制造商:Freescale Semiconductor 功能描述:GAIN BLOCK 制造商:Freescale 功能描述:RF Amp Chip Single GP 2.5GHz 5V 4-Pin(3+Tab) SOT-343R |
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