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參數資料
| 型號： | MCR69-3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | SILICON CONTROLLED RECTIFIERS |
| 中文描述： | 25 A, 100 V, SCR, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 76K |
| 代理商： | MCR69-3 |
Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 0
1
Publication Order Number:
MCR69/D
Reverse Blocking Thyristors
Designed for overvoltage protection in crowbar circuits.
Glass-Passivated Junctions for Greater Parameter Stability and
Reliability
Center-Gate Geometry for Uniform Current Spreading Enabling
High Discharge Current
Small Rugged, Thermowatt Package Constructed for Low Thermal
Resistance and Maximum Power Dissipation and Durability
High Capacitor Discharge Current, 750 Amps
Device Marking: Logo, Device Type, e.g., MCR69–2, Date Code
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage(1)
(TJ =
40 to +125
°
C, Gate Open)
MCR69–2
MCR69–3
Peak Discharge Current(2)
Symbol
Value
Unit
VDRM,
VRRM
50
100
Volts
ITM
750
Amps
On-State RMS Current
(180
°
Conduction Angles; TC = 85
°
C)
IT(RMS)
25
Amps
Average On-State Current
(180
°
Conduction Angles; TC = 85
°
C)
IT(AV)
16
Amps
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = 125
°
C)
ITSM
300
Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I2t
375
A2s
Forward Peak Gate Current
(t
≤
1.0
μ
s, TC = 85
°
C)
IGM
2.0
Amps
Forward Peak Gate Power
(t
≤
1.0
μ
s, TC = 85
°
C)
PGM
20
Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 85
°
C)
PG(AV)
0.5
Watt
Operating Junction Temperature Range
TJ
–40 to
+125
°
C
Storage Temperature Range
Tstg
–40 to
+150
°
C
Mounting Torque
—
8.0
in. lb.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various
duration of an exponentially decaying current waveform, tw is defined as
5 time constants of an exponentially decaying current pulse.
(3) Test Conditions: IG = 150 mA, VD = Rated VDRM, ITM = Rated Value,
TJ = 125
°
C.
SCRs
25 AMPERES RMS
50 thru 100 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
MCR69–2
TO220AB
500/Box
http://onsemi.com
K
G
A
TO–220AB
CASE 221A
STYLE 3
123
4
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
MCR69–3
TO220AB
500/Box
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MCR69-3G | 功能描述:SCR 100V 25A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR69-3G | 制造商:ON Semiconductor 功能描述:SCR Thyristor |
| MCR-7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Fuse |
| MCR703 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Silicon Controlled Rectifiers |
| MCR703A | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
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