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參數資料
| 型號： | MS2210 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| 中文描述： | 射頻和微波晶體管航空電子應用 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 98K |
| 代理商： | MS2210 |
MS2210.PDF 4-15-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
MS2210
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
Symbol
P
DISS
Power Dissipation*
I
C
Device Current*
V
CC
Collector-Supply Voltage*
T
J
Junction Temperature
T
STG
Storage Temperature
(Tcase = 25
°
C)
Parameter
Value
940
24
50
+200
Unit
W
A
°
C
°
C
- 65 to + 200
Thermal Data
R
TH(j-c)
Applies only to rated RF operation.
Junction-Case Thermal Resistance*
0.16
°
C/W
Features
255 MHz BANDWIDTH
GOLD METALLIZATION
EMITTER SITE BALLASTED
Pout = 300W MINIMUM
Gp = 7.0 dB
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
15:1 VSWR CAPABILITY
DESCRIPTION:
The MS2210 avionics power transistor is a broadband, high peak
pulse power device specifically designed for avionics applications
requiring broad bandwidth with moderate duty cycle and pulse width
constraints such as ground/ship DME/TACAN. The MS2210 is also
designed for specialized applications where reduced power is
provided under pulse formats utilizing short pulse widths and high
burst or overall duty cycles
This device is capable of withstanding 15:1 VSWR mismatch load
conditions at any phase angle under full rated conditions.
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