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參數資料
| 型號： | MURS120/5T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 59K |
| 代理商： | MURS120/5T |
MURS120
Vishay Semiconductors
formerly General Semiconductor
Document Number 88687
www.vishay.com
19-Apr-04
1
New Product
Ultrafast Plastic Rectifier
Reverse Voltage 200V
Forward Current 1.0A
Reverse Recovery Time 25ns
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Device Marking Codes
MD
Maximum repetitive peak reverse voltage
VRRM
200
V
Working peak reverse voltage
VRWM
200
V
Maximum DC blocking voltage
VDC
200
V
Maximum average forward rectified current at TL = 155°C
IF(AV)
1.0
A
(See figure 1)
TL = 145°C
2.0
Peak forward surge current 8.3 ms single half sine-wave
IFSM
40
A
superimposed on rated load (JEDEC Method)
Typical thermal resistance junction to ambient
RθJL
13
°C/W
Operating junction and storage temperature range
TJ, TSTG
–65 to +175°C
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous
at IF = 1.0A, TJ = 25°C
0.875
forward voltage (1)
at IF = 1.0A, TJ = 150°C
VF
0.71
V
Maximum instantaneous reverse current
TJ = 25°C
IR
2.0
A
at rated DC blocking voltage (1)
TJ = 150°C
50
Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A
trr
25
ns
Maximum reverse recovery time at
trr
35
ns
IF = 1.0A, di/dt = 50A/s, VR = 30V, Irr = 10% IRM
Maximum forward recovery time at IF = 1.0A, di/dt = 100A/s,
recovery to 1.0V
tfr
25
ns
Note: (1) Pulse test: tp = 300s, duty cycle ≤ 2%
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
Features
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Ideally suited for use in very high frequency switching
power supplies, inverters and as free wheeling diodes
Ultrafast recovery time for high efficiency
For surface mount applications Glass passivated junction
High temperature soldering guaranteed:
250°C/10 seconds on terminals
Mechanical Data
Case: JEDEC DO-214AA molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 oz., 0.093 g
Packaging Codes/Options:
5/3.2K per 13" reel (12mm tape)
2/750 EA per 7" reel (12mm tape)
Dimensions in inches
and (millimeters)
DO-214AA (SMB)
0.085 MAX
(2.16 MAX)
0.060 MIN
(1.52 MIN)
0.220 REF
0.086 MIN
(2.20 MIN)
Mounting Pad Layout
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MURS120A | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:ULTRAFAST RECTIFIER VOLTAGE RANGE 200 to 600 Volts CURRENT 1.0 Ampere |
| MURS120CSM4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ULTRAFAST POWER RECTIFIER DIODE IN CERAMIC |
| MURS120-E3/2CT | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120-E3/52T | 功能描述:整流器 1.0 Amp 200V 25ns RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120-E3/55T | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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