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參數資料
| 型號： | S3590-09 |
| 元件分類： | 光敏二極管 |
| 英文描述： | PIN PHOTO DIODE |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 110K |
| 代理商： | S3590-09 |
Features
l Higher sensitivity and low dark current than conventional type
l Sensitivity matching with BGO and CsI (TI) scintillators
l High quantum efficiency: QE=85 % (λ=540 nm)
l Low capacitance
l High-speed response
l High stability
l Good energy resolution
Applications
l Scintillation detectors
l Calorimeters
l Hodoscopes
l TOF counters
l Air shower counters
l Particle detectors, etc.
PHOTODIODE
Si PIN photodiode
Large area sensors for scintillation detection
S3590-08/-09
1
s General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
Depletion
layer
thickness
Type No.
Window
material
(mm)
Reverse
voltage
VR Max.
Power
dissipation
P
(mW)
Operating
temperature
Topr
(°C)
Storage
temperature
Tstg
(°C)
S3590-08
Epoxy resin
S3590-09
Window-less
10 × 10
0.3
100
-20 to +60
-20 to +80
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
Dark
current
ID
VR=70 V
λ=λp
Type No.
Spectral
response
range
λ
(nm)
Peak
sensitivity
wavelength
λp
(nm)
(A/W)
LSO
420 nm
(A/W)
BGO
480 nm
(A/W)
CsI(Tl)
540 nm
(A/W)
Short
circuit
current
Isc
100 lx
(A)
Typ.
(nA)
Max.
(nA)
Temp.
coefficient
of ID
TCID
VR=70 V
(times/°C)
Cut-off
Frequency
fc
VR=70 V
(MHz)
Terminal
capacitance
Ct
f= 1MHz
VR=70 V
(pF)
NEP
VR=70 V
(W/Hz
1/2)
S3590-08
0.66
0.20
0.30
0.36
100
S3590-09
320 to
1100
960
0.66
0.22
0.33
0.41
90
2
6
1.12
40
3.8 × 10 -14
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