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參數資料
| 型號： | S8664-55 |
| 元件分類： | 光敏二極管 |
| 英文描述： | AVALANCHE PHOTO DIODE |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 109K |
| 代理商： | S8664-55 |
Features
Applications
PHOTODIODE
Si APD
Short wavelength type APD
S8664 series
l High sensitivity at visible range
l Low noise
l High gain
l Low capacitance
l Low-light-level measurement
l Analytical equipment
1
General ratings / Absolute maximum ratings
Absolute maximum ratings
Effective *
2
active area size
Effective active
area
Type No.
Dimensional
outline
/Window
material *
1
Package
(mm)
(mm
2)
Operating
temperature
Topr
(°C)
Storage
temperature
Tstg
(°C)
S8664-02K
φ0.2
0.03
S8664-05K
φ0.5
0.19
S8664-10K
φ1.0
0.78
S8664-20K
/K
TO-5
φ2.0
3.14
S8664-30K
φ3.0
7.0
S8664-50K
/K
TO-8
φ5.0
19.6
-55 to +100
S8664-55
/E
5 × 5
25
S8664-1010
/E
Ceramic
10 × 10
100
-20 to +60
-20 to +80
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Spectral
response
range
λ
Peak *3
sensitivity
wavelength
λp
Photo
sensitivity
S
M=1
λ=420 nm
Quantum
efficiency
QE
M=1
λ=420 nm
Breakdown
voltage
VBR
ID=100 A
Te mperature
coefficient of
VBR
Dark *
3
current
ID
Cut-off
frequency
fc
Terminal *3
capacitance
Ct
Excess *
3
Noise
index
λ=420 nm
Gain
M
λ=420 nm
Type No.
(nm)
(A/W)
(%)
Typ.
(V)
Max.
(V)
(V/°C)
Typ.
(nA)
Max.
(nA)
(MHz)
(pF)
S8664-02K
0.1
1
700
0.8
S8664-05K
0.2
1.5
680
1.6
S8664-10K
0.3
3
530
4
S8664-20K
0.6
6
280
11
S8664-30K
1
15
140
22
S8664-50K
3
35
60
55
S8664-55
5
50
40
80
S8664-1010
320 to
1000
600
0.24
70
400
500
0.78
10
100
11
270
0.2
50
*1: K: Borosilicate glass E: Epoxy resin
*2: Area in which a typical gain can be obtained.
*3: Values measured at a gain listed in the characteristics table.
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