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參數(shù)資料
| 型號(hào)： | SD100-11-21-021 |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 140K |
| 代理商： | SD100-11-21-021 |
General Purpose PIN Photodiodes
Specifications
Responsivity:
0.32 A/W minimum, 0.36 A/W typical @ 632.8nm; 0.50 A/W minimum, 0.55 A/W typical @ 900 nm
Series Resistance:
100
maximum (measured by applying +10mA to photodiode and measuring voltage across anode and cathode)
Part Number
Active Area
Storage &
Operating Temp.
Shunt Resistance
Dark Current1
@ 5V
Breakdown
Voltage2
@ 10
A
Capacitance3
(typ)
NEP4
Max.
Linear
Current5
Response Time6
@ 10V
.
in.
(mm)
(C
° )
(min)
(M-Ohm)
(typ)
(nA)
(max)
(nA)
(typ)
(V)
at 0V
(pF)
at 5V
(pF)
(typ)
(W/
√ Hz)
(typ)
(mA)
(typ)
(nsec)
SD 057-11-21-015
0.051 x 0.051
(1.3 x 1.3)
-20 to 75
800
0.5
2.0
50
28
6
2.8x10-14
0.17
7
SD 057-11-21-011
0.051 x 0.051
(1.3 x 1.3)
-40 to 110
800
0.5
2.0
50
28
6
2.8x10-14
0.17
7
SD 076-11-21-011
(isolated) –211
0.105 x 0.043
(2.66 x 1.09)
-40 to 110
450
0.9
3.5
50
10
3.2x10-14
0.29
8
SD 100-11-21-021
(isolated) -221
0.100 (dia.)
(2.54 dia.)
-40 to 110
300
1.6
6.4
50
87
18
4.0x10-14
0.51
10
SD 125-11-21-021
0.111 x 0.111
(2.8 x 2.8)
-40 to 110
180
2.5
10.0
50
135
28
5.2x10-14
0.80
15
SD 172-11-21-021
(isolated) –221
0.185 x 0.125
(4.7 x 3.18)
-40 to 110
100
5.0
20.0
50
255
53
7.0x10-14
1.5
30
SD 200-11-21-041
(isolated) –241
0.200 (dia.)
(5.08 dia.)
-40 to 110
70
6.5
26.0
50
345
71
8.6x10-14
2.03
32
SD 290-11-21-041
(isolated) –241
0.300 x 0.220
(7.62 x 5.58)
-40 to 110
35
13.0
52.0
50
725
150
1.2x10-13
4.26
70
SD 445-11-21-305
0.394 x 0.394
(10 x 10)
-20 to 75
15
30.0
120
50
1700
350
2.0x10-13
10.0
140
1. Dark Current and Shunt Resistance vary with temperature as follows: for T>23° C, ID=1.09 TID23, RSH=0.9 TRSH23 and for T<23° C, ID=ID23/1.09 T,
RSH=RSH23/0.9 T, where T is the temperature difference from 23° C, and ID23 and RSH23 are the dark current and shunt resistance at 23° C.
2.
Typical values listed. Minimum value shall be 50% of typical.
3.
Typical values are listed in the table. Maximum value is 20% higher than the typical value.
4.
Test conditions are VB=5V and 950nm.
5.
Maximum linear current specifies the level above which the output current deviates more than 10%. Short circuit current saturates at approximately 10 times this
level.
6.
Response times listed are for the rising or falling edge, and were measured at 830nm with a 50W load. Shorter wavelengths will result in faster rise and fall times.
General Purpose Pin
file:///D|/WEB SITES/API/TMPehsgpgbkzq.htm (1 of 5) [7/11/2001 10:39:04 AM]
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