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參數(shù)資料
| 型號： | SS26/2BT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 310K |
| 代理商： | SS26/2BT |
SS22 thru SS26
Document Number 88784
14-Jul-05
Vishay General Semiconductor
www.vishay.com
1
DO-214AA (SMB)
Surface Mount Schottky Barrier Rectifier
Major Ratings and Characteristics
IF(AV)
2.0 A
VRRM
20 V to 60 V
IFSM
75 A
VF
0.50 V, 0.70 V
Tj max.
125 °C, 150 °C
Features
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications
Mechanical Data
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol
SS22
SS23
SS24
SS25
SS26
Unit
Device marking code
S2
S3
S4
S5
S6
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Max. average forward rectified current
at TL (See Fig. 1)
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
IFSM
75
A
Non-repetitive avalanche energy
at TA = 25 °C, IAS = 2.0 A, L = 10 mH
EAS
20
mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
Ω
VC
8.0
KV
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction temperature range
TJ
- 65 to + 125
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
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