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參數資料
| 型號： | SSR2010ZS |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-254 |
| 封裝： | HERMETIC SEALED, TO-254Z, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 92K |
| 代理商： | SSR2010ZS |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0091J
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SSR20
__
│
└
│
└
│
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Lead Options
__ = Straight Leads,
DB = Bent Down
UB = Bent Up
Package
M = TO-254
Z = TO-254Z
Voltage / Family
08 = 80V
09 = 90V
10 = 100V
SSR2008M, SSR2008Z
SSR2009M, SSR2009Z
SSR2010M, SSR2010Z
20 AMPS
100 VOLTS
SCHOTTKY
RECTIFER
FEATURES:
PIV: 100 Volts
Low Reverse Leakage Current
Low Forward Voltage Drop
Guard Ring for Overvoltage Protection
Isolated Hermetically Sealed Package
Available in Glass or Ceramic Seal Packages
Custom Lead Forming Available
Eutectic Die Attach
175°C Operating Junction Temperature
TX, TXV, and Space Level Screening
Available
MAXIMUM RATINGS3/
Symbol
Value
Unit
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
SSR2008M & Z
SSR2009M & Z
SSR2010M & Z
VRRM
VRWM
VR
80
90
100
Volts
Average Rectified Forward Current 1/4/
(Resistive Load, 60 Hz, Sine Wave, TC = 25
°C)
IO
20
Amps
Peak Surge Current 4/
(8.3 ms Pulse, Half Sine Wave, TA = 25
°C)
IFSM
300
Amps
Operating and Storage Temperature
TOP & Tstg -65 to +175
°C
Maximum Thermal Resistance4/
(Junction to Case)
RθJC
1.2
°C/W
NOTE:
TO-254
TO-254Z
1/ Derate linearly at 1A/
°C for T
C > 155
°C
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ All electrical characteristics @25
°C, unless otherwise specified
4/ Pins 2 and 3 externally connected together
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